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On-chip nonvolatile photonic memory would be a revolution in optoelectronic computing, reducing power consumption and accessing the multi-channel operations. The promising candidate for this role are Phase Changing Materials (PCM), which expose different optical properties depending on their phase, which can be manipulated. The well-studied PCM alloy Ge₂Sb₂Te₅ (GST) show the significant change in complex refractive index in visible and near-infrared wavelength region. The state discrimination down to nanoscale cell size is a key factor for miniaturisation of the devices and incorporating GST into the complex photonic computing architectures. Encoding of photonic memory is done via local phase switching of GST, which results in propagating signal modulation. In the scope of this work, the switching of PCM and effective signal modulation was evaluated. The new interferometric measurement method was introduced and implemented, its result made good comparison with previously used one.